View IRFH6200TRPBF_7780557.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

october 12, 2012 irfh6200pbf hexfet power mosfet notes through are on page 8 features and benefits www.irf.com 1 pqfn 5x6 mm note form quantity IRFH6200TRPBF pqfn 5mm x 6mm tape and reel 4000 irfh6200tr2pbf pqfn 5mm x 6mm tape and reel 400 orderable part number package type standard pack applications ???

???
v ds 20 v r ds(on) max (@v gs = 4.5v) 1.20 m ? q g (typical) 155 nc r g (typical) 1.3 ? i d (@t mb = 25c) 100 a features benefits low r dson ( ? 1.20m ?? lower conduction losses low thermal resistance to pcb ( ?? ? ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v i d @ t mb = 25c continuous drain current, v gs @ 4.5v i d @ t mb = 100c continuous drain current, v gs @ 4.5v i dm pulsed drain current p d @t a = 25c power dissipation p d @t mb = 25c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range 20 36 100 -55 to + 150 3.6 0.029 156 v w a c max. 45 100 400 12 !" #

2 www.irf.com october 12, 2012 s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ?? ? ? ? t d(on) turn-on delay time ??? 14 ??? t r rise time ???74??? t d(off) turn-off delay time ??? 140 ??? t f fall time ??? 160 ??? c iss input capacitance ??? 10890 ??? c oss output capacitance ??? 2890 ??? c rss reverse transfer capacitance ??? 2180 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 86 130 ns q rr reverse recovery charge ??? 350 525 nc t on forward turn-on time time is dominated by parasitic inductance mosfet symbol na ns a pf nc v gs = 4.5v ??? v gs = 12v v gs = -12v ??? ??? 400 ??? ??? 100 conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 50a conditions see fig.15 max. 780 30 ? = 1.0mhz t j = 25c, i f = 50a, v dd = 10v di/dt = 260a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. ??? r g =1.0 ? v ds = 10v, i d = 50a v ds = 16v, v gs = 0v, t j = 125c a i d = 50a (see fig.17 & 18) i d = 50a v gs = 0v v ds = 10v v ds = 16v, v gs = 0v v ds = v gs , i d = 150 a v gs = 2.5v, i d = 50a typ. m ? v dd = 10v, v gs = 4.5v thermal resistance parameter typ. max. units r ? jc-mb junction-to-mounting base 0.5 0.8 r ? jc (top) junction-to-case ??? 15 c/w r ? ??? 35 r ? ja (<10s) junction-to-ambient ??? 22

www.irf.com 3 october 12, 2012 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v ? 60 s pulse width tj = 25c 1.3v 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.3v ? 60 s pulse width tj = 150c vgs top 10v 4.5v 3.5v 2.5v 2.0v 1.8v 1.5v bottom 1.3v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 100 200 300 400 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v i d = 50a 0.5 1.0 1.5 2.0 2.5 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 10v ? 60 s pulse width

4 www.irf.com october 12, 2012 fig 11. maximum effective transient thermal impedance, junction-to-mounting base fig 8. maximum safe operating area fig 9. maximum drain current vs. case temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150 a i d = 500 a i d = 1.0ma i d = 1.0a 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100 sec dc 25 50 75 100 125 150 t c , case temperature (c) 0 50 100 150 200 250 300 i d , d r a i n c u r r e n t ( a ) limited by package 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc

www.irf.com 5 october 12, 2012 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage 25 50 75 100 125 150 starting t j , junction temperature (c) 0 500 1000 1500 2000 2500 3000 3500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 19a 21a bottom 30a 0 2 4 6 8 10 12 v gs, gate -to -source voltage (v) 0 1 2 3 4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 50a t j = 25c t j = 125c fig 14. typical avalanche current vs. pulsewidth 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse)

6 www.irf.com october 12, 2012 fig 15. $
% &
&'
( for n-channel hexfet power mosfets fig 18a. gate charge test circuit fig 18b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s fig 16b. unclamped inductive waveforms fig 16a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
???? ????? + - ???? ? ???? ?? ?? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period )

) + - + + + - - - ??? !" # $ ??? ! % &'&& ??? # (( ??? &'&& ) ! '

www.irf.com 7 october 12, 2012 pqfn 5x6 outline "b" package details
http://www.irf.com/package/ pqfn 5x6 outline "b" part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code)

!

!

!!

"#$% &' (!'))*** )($ )!!)$ %&!

!+
!
(,
!

!!

"#$-' (!'))*** )($ )!!)$ -!

8 www.irf.com october 12, 2012 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 1.7mh, r g = 25 ? , i as = 30a. pulse width ? 400 s; duty cycle ? 2%. r ?? is measured at
when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability. ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 10/2012 data and specifications subject to change without notice. pqfn 5x6 outline "b" tape and reel ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec je s d47f ??? guidelines )

▲Up To Search▲

Price & Availability of IRFH6200TRPBF

	To Download IRFH6200TRPBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .